Preprint E45/2016
Analytical Expressions for the Luminescence of Dilute Quaternary InAs(N,Sb) Semiconductors
Chijioke I. Oriaku | Timothy J. Spencer | Xu Yang | Jorge Passamani Zubelli | Mauro Fernandes Pereira
Keywords: Photonic band gap | Luminescence | Metals | many-body effects | semiconductor materials

In this paper, we calculate the luminescence of the dilute quaternary InAs(N,Sb). The theory starts with the band anticrossing model applied to both conduction and the valence band to generate input for analytical approximations that lead to luminescence spectra, including relevant many body effects. Direct application of the equations leads to good agreement with recently measured experimental data.