Inverse Problems for Semiconductors: Models and Methods

Jorge P. Zubelli | Leitão, Antonio | Markowich, Peter

Keywords: Inverse Problems | semiconductor | nanotechnologies | voltage current map

We consider the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by different models connected to the voltage-current map. Stationary as well as transient settings are discussed and a framework for the corresponding inverse problems is established. Numerical implementations for the so-called stationary unipolar and stationary bipolar cases show the effectiveness of a level set approach to tackle the inverse problem.

Anexos:

• paper-mantova.pdf